Low-temperature molecular beam epitaxy of Si1-x-yGexCySi quantum well structures: Electrical and optical properties

Thin Solid Films

Volumn 321, Issue 1-2, 1998, Pages 26-32

  Grutzmacher D ^a   Hartmann, R ^a   Schnappauf, P ^a   Gennser, U ^a   Muller E ^a   Bachle D ^a   Dommann, A ^b  

^a PAUL SCHERRER INSTITUTE   (Switzerland)

^b Labor für Vakuumtechnologie   (Switzerland)

Author keywords

Molecular beam epitaxy; Quantum well structure; Rapid thermal annealing; SiGeC

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; EVAPORATION; LOW TEMPERATURE OPERATIONS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES;

ELECTRON BEAM EVAPORATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0344865590     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)00438-6     Document Type: Article

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