A UHV STMfor in situ characterization of MBE/CVDgrowth on 4-inch wafers

Applied Physics A: Materials Science and Processing

Volumn 66, Issue SUPPL. 1, 1998, Pages

  Leifeld, O ^a,b   Muller B ^a,c   Grutzmacher D A ^b   Kern, K ^a  

^a EPFL   (Switzerland)

^b PAUL SCHERRER INSTITUTE   (Switzerland)

^c ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

EIGEN MODES; HIGH-RESOLUTION MEASUREMENTS; IN-SITU CHARACTERIZATION; INCHWORM MOTORS; INSTRUMENT PERFORMANCE; NOISE LEVELS; SAMPLE HOLDERS; SI (1 1 1); SI(001) SURFACES; UHV CHAMBERS; UHV-STM; VIBRATION ISOLATIONS;

CHEMICAL VAPOR DEPOSITION; LAMINAR FLOW; SILICON; ULTRAHIGH VACUUM;

SILICON WAFERS;

EID: 0013367998     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s003390051282     Document Type: Article

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