Deposition of tantalum oxide films by UV laser reactive ablation in O3 ambient

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 11, 1997, Pages 6714-6717

  Fu, Zhengwen ^a   Zhou, Mingfei ^a   Qin, Qizong ^a   Zhang, Shenkun ^a   Lu, Fang ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

Dielectric properties; Electrical properties; Pulsed laser deposition; Tantalum oxide

Indexed keywords

CAPACITANCE; CAPACITORS; DEPOSITION; ELECTRIC FIELD EFFECTS; LASER ABLATION; LEAKAGE CURRENTS; OZONE; PERMITTIVITY; PULSED LASER APPLICATIONS; SILICON WAFERS; TANTALUM COMPOUNDS; ULTRAVIOLET RADIATION;

BORDER TRAP DENSITY; CAPACITANCE VOLTAGE CHARACTERISTICS; INTERFACE TRAP DENSITY; TANTALUM OXIDE;

DIELECTRIC FILMS;

EID: 0343443300     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.6714     Document Type: Article

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