SiC/Si heterostructure negative-differential-resistance diode for high-temperature applications

Applied Physics Letters

Volumn 72, Issue 23, 1998, Pages 3017-3019

  Wu, Kuen Hsien ^a   Fang, Yean Kuen ^a   Ho, Jyh Jier ^a   Hsieh, Wen Tse ^a   Chen, Tzer Jing ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001689496     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121526     Document Type: Article

References (9)

1. F. Capasso, S. Sen, A. C. Gossard, A. L. Hutchinson, and J. H. English, IEEE Electron Device Lett. 7, 573 (1986).
2. S. Sen F. Capasso, A. L. Hutchinson, and A. Y. Chou, Electron. Lett. 23, 1229 (1988).
3. T. P. E. Broekaert, W. Lee, and G. C. Fonstad, Appl. Phys. Lett. 53, 1545 (1988).
4. M. Tsuchiya, H. Sakaki, and J. Yoshino, Jpn. J. Appl. Phys., Part 2 24, L466 (1985).
5. K. Xie, J. H. Zhao, J. R. Flemish, T. Burke, W. R. Buchwald, G. Lorenzo, and H. Singh, IEEE Electron Device Lett. 17, 142 (1996).
6. A. Itoh, T. Kimoto, and H. Matsunmi, IEEE Electron Device Lett. 17, 139 (1996).
7. J. D. Hwang, Y. K. Fang, K. H. Chen, and D. N. Yaung, IEEE Electron Device Lett. 16, 193 (1995).
8. H. Matsuura, T. Okuno, H. Okushi, and K. Tanaka, J. Appl. Phys. 55, 912 (1984).
9. M. I. Chaudhry, IEEE Electron Device Lett. 12, 670 (1991).