Investigations of diamond nucleation on a-C films generated by d.c. bias and microwave plasma

Diamond and Related Materials

Volumn 3, Issue 4-6, 1994, Pages 506-509

  Gerber, J ^a   Weiler, M ^a   Sohr, O ^a   Jung, K ^a   Ehrhardt, H ^a  

^a UNIVERSITY OF KAISERSLAUTERN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; ELECTRON ENERGY LEVELS; ETCHING; FILM GROWTH; INTERFACES (MATERIALS); ION IMPLANTATION; METHANE; SILICON; SILICON CARBIDE; SUBSTRATES;

D.C. BIAS; DIAMOND NUCLEATION; MICROWAVE PLASMA;

SYNTHETIC DIAMONDS;

EID: 0028416524     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/0925-9635(94)90212-7     Document Type: Article

References (14)

1. Nucleation mechanisms of diamond in plasma chemical vapor deposition
2. The effect of substrate bias voltage on the nucleation of diamond crystals in a microwave plasma assisted chemical vapor deposition process
3. Diamond and Diamond-like Materials
4. Raman scattering characterization of carbon bonding in diamond and diamondlike thin films
5. 3rd Int. Symp. on Diamond Materials
6. Chemical erosion of graphite by hydrogen impact: A summary of the database relevant to diamond film growth