Ordering reduction in In0.5Ga0.5P grown by solid source molecular beam epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 2 SUPPL. B, 1998, Pages

  Cheng, Yi Cheng ^a   Tai, Kuochou ^a   Chou, Shu Tsun ^b   Huang, Kai Feng ^a   Tu, Shun Lih ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL DEFENSE UNIVERSITY   (Taiwan)

^c CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

InGaP; Ordering; Polarized PL; SL; SSMBE

Indexed keywords

MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SPECTROSCOPY; SUBSTRATES;

BUFFER LAYERS;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0032003327     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.37.L200     Document Type: Article

References (13)

1. A. Zunger: Appl. Phys. Lett. 50 (1987) 164.
2. T. Suzuki, A. Gomyo and S. Iijima: J. Cryst. Growth 99 (1990) 60.
3. T. Nishinaga and T. Suzuki: J. Cryst. Growth 115 (1991) 398.
4. S. H. Wei and A. Zunger: Appl. Phys. Lett. 56 (1990) 662.
5. L. Suzuki, Y. Nishikawa, M. Ishikawa and Y. Kokubun: J. Cryst. Growth 113 (1991) 127.
6. H. Asahi, S. Emura, S. Gonda, Y. Kawamura and H. Tanaka: J. Appl. Phys. 65 (1989) 5007.
7. A. Kikuchi and K. Kishino: J. Cryst. Growth 127 (1993) 9.
8. T. Kawai, H. Yonezu, Y. Ogasawara, D. Saito and K. Pak: Appl. Phys. Lett. 63 (1993) 2067.
9. T. Suzuki, A. Gomyo and S. Iijima: J. Cryst. Growth 93 (1988) 396.
10. G. W. 't Hooft, C. J. B. Riviere, M. P. C. M. Krijn, C. T. H. F. Liedenhaum and A. Valsler: Appl. Phys. Lett. 61 (1992) 3169.
11. A. Gomyo, T. Suzuki and S. Iijima: Phys. Rev. Lett. 60 (1988) 2645.
12. A. Mascarenhas, S. Kurtz, A. Kibbler and J. M. Olson: Phys. Rev. Lett. 63 (1989) 2108.
13. K. Nakano, A. Toda, T. Yamamoto and A. Ishibashi: Appl. Phys. Lett. 61 (1992) 1959.