High-power GaInP-AlGaInP quantum-well lasers grown by solid source molecular beam epitaxy

IEEE Photonics Technology Letters

Volumn 8, Issue 3, 1996, Pages 319-321

  Tappura, K ^a   Aarik, J ^b,c   Pessa, M ^c  

^a NOKIA RESEARCH CENTER   (United States)

^b TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

^c UNIVERSITY OF TARTU   (Estonia)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; HEAT RADIATION; LASER PULSES; LASER SURGERY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; THERMAL EFFECTS;

DIFFERENTIAL QUANTUM EFFICIENCY; SOLID SOURCE MOLECULAR BEAM EPITAXY; THRESHOLD CURRENTS;

QUANTUM WELL LASERS;

EID: 0030104443     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.481103     Document Type: Article

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