Highly reliable operation at 80°C for 650nm 5mW AlGaInP LDs

Electronics Letters

Volumn 33, Issue 19, 1997, Pages 1636-1638

  Ohya, M ^a   Doi, K ^a   Fujii, H ^a   Endo, K ^a   Okuda, J ^a   Anjiki, K ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Semiconductor junction lasers

Indexed keywords

ELECTRIC CURRENTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

MEDIAN TIME BEFORE FAILURE;

SEMICONDUCTOR LASERS;

EID: 0031237523     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19971100     Document Type: Article

References (3)

1. 0.5P', NEC Res. Dev., 1994, 35, pp. 134-143
2. HOTTA, H., GOMYO, A., MIYASAKA, F., TADA, K., SUZUKI, T., and KOBAYASHI, K.: 'Anomalous photoluminescence behaviour for GaInP/AlGaInP quantum wells grown by MOVPE on misoriented (001) substrates', Inst. Phys. Conf. Ser., 1993, 136, pp. 631-636
3. L 683nm) semiconductor laser', Electron. Lett., 1987, 23, pp. 938-939