Low-threshold 1.5 μm quaternary quantum well lasers grown by solid source molecular beam epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 7 b, 1996, Pages

  Savolainen, Pekka ^a   Toivonen, Mika ^a   Asonen, Harry ^a   Murison, Richard ^a  

^a TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; CURRENT DENSITY; EPITAXIAL GROWTH; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; WAVEGUIDES;

CLEAVED RIDGE WAVEGUIDE LASER; INDIUM GALLIUM ARSENIC PHOSPHIDE; LOW THRESHOLD CURRENT; QUATERNARY QUANTUM WELL LASERS; STRAINED LAYER; VALVED CRACKER CELLS;

QUANTUM WELL LASERS;

EID: 0030189771     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l900     Document Type: Article

References (20)