Low-threshold aluminum free 808 nm lasers grown by solid source molecular beam epitaxy

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1997, Pages 44-46

  Savolainen, Pekka ^a   Toivonen, Mika ^a   Jalonen, Marko ^a   Pessa, Markus ^a  

^a TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; CURRENT DENSITY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

SOLID SOURCE MOLECULAR BEAM EPITAXY (SSMBE);

QUANTUM WELL LASERS;

EID: 0030672783     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)