Structural and carrier density dependence of carrier lifetime in InGaAs/GaAs multiple-quantum-well lasers

Applied Physics Letters

Volumn 69, Issue 21, 1996, Pages 3158-3160

  Czotscher, K ^a   Weisser, S ^a   Larkins, E C ^a,c   Fleissner, J ^a   Ralston, J D ^a,d   Schonfelder A ^a,d   Rosenzweig, J ^a   Esquivias, I ^b  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^b UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^c UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^d SDL INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CARRIER CONCENTRATION; DIFFUSION; FREQUENCY RESPONSE; LIGHT EMISSION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; STRUCTURE (COMPOSITION); WAVEGUIDES;

CARRIER LIFETIME; INDIUM GALLIUM ARSENIDE; RADIATIVE RECOMBINATION; RIDGE WAVEGUIDE LASERS; SPONTANEOUS EMISSION; SURFACE RECOMBINATION VELOCITY;

QUANTUM WELL LASERS;

EID: 0030287911     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116814     Document Type: Article

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