Carrier escape time in GaAs/AlGaAs and InGaAs/GaAs quantum well lasers

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 2684, Issue , 1996, Pages 17-26

  Esquivias, Ignacio ^a   Romero, B ^a   Weisser, S ^a   Czotscher, Konrad ^a   Ralston, John D ^a   Larkins, E C ^a   Arias, J ^a   Schoenfelder, A ^a   Mikulla, M ^a   Fleissner, Joachim ^a   Rosenzweig, Josef ^a  

^a Madrid Spain ^*  (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; P DOPING;

CHARGE CARRIERS; DOPING (ADDITIVES); ELECTRIC IMPEDANCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; TRANSPORT PROPERTIES;

SEMICONDUCTOR LASERS;

EID: 0029714177     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (21)