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Volumn , Issue , 1998, Pages 251-256

Dissolved wafer process using a porous silicon sacrificial layer and a lightly-doped bulk silicon etch-stop

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; ELECTRODES; EPITAXIAL GROWTH; MICROMACHINING; POROUS SILICON; POTASSIUM COMPOUNDS; PROBES; PROSTHETICS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SUBSTRATES;

EID: 0031654019     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (16)

References (10)
  • Reference 정보가 존재하지 않습니다.

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.