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Volumn , Issue , 1998, Pages 251-256
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Dissolved wafer process using a porous silicon sacrificial layer and a lightly-doped bulk silicon etch-stop
a a |
Author keywords
[No Author keywords available]
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Indexed keywords
COMPOSITION EFFECTS;
ELECTRODES;
EPITAXIAL GROWTH;
MICROMACHINING;
POROUS SILICON;
POTASSIUM COMPOUNDS;
PROBES;
PROSTHETICS;
SEMICONDUCTOR DEVICE MANUFACTURE;
SEMICONDUCTOR DOPING;
SUBSTRATES;
NEURAL PROBES;
POTASSIUM HYDROXIDE;
SILICON WAFERS;
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EID: 0031654019
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (16)
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References (10)
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