Three-layer 3-D silicon system using through-Si vertical optical interconnections and Si CMOS hybrid building blocks

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 5, Issue 2, 1999, Pages 276-286

  Bond, Steven W ^a,b   Vendier, Olivier ^a   Lee, Myunghee ^a   Jung, Sungyong ^a   Vrazel, Michael ^a   Lopez Lagunas, Abelardo ^a   Chai, Sek ^a   Dagnall, Georgianna ^a   Brooke, Martin ^a   Jokerst, Nan Marie ^a   Wills, D Scott ^a   Brown, April ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIT ERROR RATE; CMOS INTEGRATED CIRCUITS; INTEGRATED OPTOELECTRONICS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING SILICON;

VERTICAL OPTICAL INTERCONNECTS;

OPTICAL INTERCONNECTS;

EID: 0032657590     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.778306     Document Type: Article

References (38)

1. J. D. Meindl, "Gigascale integration: Is the sky the limit?" IEEE Circuits and Devices Mag., vol. 12, pp. 19-32, Nov. 1996.
2. [Online]. Available HTTP: http://notes.sematech.org/97pelec.html
3. S. Tang and R. Chen, "1-to27 highly parallel three-dimensional intra and inter board optical interconnects," IEEE Photon. Technol. Lett., vol. 6, pp. 299-301, Feb. 1994.
4. J. W. Goodman and F. J. Leonberger, "Optical interconnection for VLSI systems," S.-Y Kung and R. A. Athale, Eds., Proc. IEEE, vol. 72, pp. 850-866, 1984.
5. N. Awaya, Y. Arita, H, Inokawa, and T. Kobayashi, "Copper interconnection technology for Si large scale integrated circuits," NTT R&D, vol. 45, no. 4, pp. 373-378, 1996.
6. R. T. Chen, H. Lu, D. Robinson, Z. Sun, T. Hannson, D. V. Plant, and H. R. Fetterman, "60 GHz board-to-board optical interconnection using polymer optical buses in conjunction with microprism couplers," Appl. Phys. Lett., vol 60, pp. 536-538, 1992.
7. M. Koyanagi, H. Takata, H. Okano, and S. Yokoyama, "Three-dimensional memory LSI with optical interconnections," Electron.Commun. Jpn., vol. 76, pt. 2, no. 2, pp. 1-13, 1993.
8. M. Brooke, N. M. Jokerst, S. W. Bond, and D. S. Wills, "A comparison of CMOS chip to chip interconnections: Vertical optical through-Si links versus high density electrical interconnect," presented at the Annu. Meeting Lasers and Electro-Optics Society, Dec. 1998, paper ThU3.
9. D. S. Wills, W. S. Lacy, C. Camperi-Ginestet, B. Buchanan, H. H. Cat. S. Wilkinson, M. Lee, N. M. Jokerst, and M. A. Brooke, "A three-dimensional high-throughput architecture using through-wafer optical interconnect," J. Lightwave Technol., vol. 13, pp. 1085-1092, June 1995.
10. M. Campbell, M. Little, M. Yung, J. Brewer, and M. J. Yung, "Heiratchical fault tolerance for 3D microelectronics," in Proc. Int. Conf. Wafer Scale Integration, San Francisco, CA, 1990, pp. 174-188.
11. L. A. Hornak and S. K. Tewksbury, "On the feasibility of through-wafer optical interconnects for hybrid wafer-scale-integrated architectures," IEEE Trans. Electron Devices, vol. ED-34, pp. 1557-1563, July 1987.
12. A. D. Norte, A. E. Willner, W. Shieh, and A. R. Tanguay, "Multiple-layer optical interconnections using through-wafer hollow-dielectric-waveguide vias," IEEE Photon. Technol. Lett., vol. 6, pp. 851-854, July 1994.
13. [131 J. Yoo, J. E. Leight, G. Giaretta, W. Yuen, A. E. Willner, and C. J. Chang-Hasnain, "Experimental demonstration of a four-plane 2-D multiple-wavelength optical interconnection using integrated VCSEL arrays and MQW/DBR detectors," IEEE Photon. Technol. Lett., vol. 9, pp. 1646-1648, Dec. 1996.
14. N. M. Jokerst, C. Camperi-Ginestet, B. Buchanan, S. Wilkinson, and M. A. Brooke, "Communication through stacked Si circuitry using integrated thin film InP-based emitters and detectors," IEEE Photon. Technol. Lett., vol. 7, pp. 1028-1030, Sept. 1995.
15. J. Geist, A. Migdall, and H. P. Baltes, "Analytic representation of the Si absorption coefficient in the indirect transition region," Appl. Opt., vol. 27, no. 18, pp. 3777-3779, 1988.
16. K. H. Calhoun, C. Camperi-Ginestet, and N. M. Jokerst, "Vertical optical communication through stacked silicon wafers using hybrid monolithic thin film InGaAsP emitters and detectors," IEEE Photon. Technol. Lett., vol. 5, pp. 254-257, Feb. 1993.
17. O. Vendier, S. W. Bond, M. Lee, S. Jung, M. Brooke, N. M. Jokerst, and R. P. Leavitt, "Stacked silicon CMOS circuits with a 40 Mb/s through-silicon optical interconnect," IEEE Photon. Technol. Lett., vol. 10, pp. 606-608, Apr. 1998.
18. M. Govindarajan, S. Siala, and R. N. Nottenburg, "Optical receiver systems for high speed parallel digital data links," J. Lightwave Technol., vol. 13, pp. 1555-1565, July 1995.
19. T. G. Brown, P. L Bradfield, and D. G. Hall, "Optical emission from crystalline Si," Proc. SPIE, vol. 704, pp. 38-42, 1987.
20. G. W. Turner, C. K. Chen, B. Y. Tsaur, and A. M. Waxman, "Through-wafer optical communication using monolithic InGaAs-on-Si LED's and monolithic PtSi-Si Schottky-barrier detectors," IEEE Photon. Technol. Lett., vol. 3, pp. 761-763, Aug. 1991.
21. L. A. Hornak, S. K. Tewksbury, and H. E. Nariman, "GaAs heteroepitaxy with submicron Si CMOS: An experimental compatibility study," Proc. SPIE, vol. 1849 pp. 38-47, 1993.
22. K. W. Goossen, G. D. Boyd, J. E. Cunningham, Y. Y. Jan, D. A. B. Miller, D. S. Chemla, and R. M. Lum, "GaAs/AlGaAs multiquantum well reflection modulators grown on GaAs and Si substrated," IEEE Photon. Technol. Lett., vol. 1, pp. 304-306, Oct. 1989.
23. C. Camperi-Ginestet, M. Hargis, N. Jokerst, and M. Allen, "Alignable epitaxial lift-off of GaAs materials with selective deposition using polyimide diaphragms," IEEE Photon. Technol. Lett., vol. 2, pp. 1123-1125, Dec. 1991.
24. D. A. B. Miller, "Dense two-dimensional integration of optoelectronics and electronics for interconnection," Heterogeneous Integration: Systems on a Chip, SPIE Critical Reviews of Optical Engineering, A. Husain and B. Fallahi, Eds., vol. CR 70, 1998, pp. 80-119.
25. M. Brooke, N. Jokerst, S. Bond, and D. Wills, "Comparison of CMOS chip to chip interconnections: Vertical optical through-Si links versus high density electrical interconnect," in Proc. Conf. IEEE LEOS Annu. Meeting, Orlando, FL, Dec. 1998, pp. 186-187.
26. M. Lee, O. Vendier, M. A. Brooke, and N. M. Jokerst, "Scaleable CMOS current-mode preamplifier design for an optical receiver," Analog Integrated Circuits and Signal Processing, vol. 12, pp. 133-144, 1997.
27. R. P. Jindal, "Gigahertz-band high-gain low-noise AGC amplifiers in fine-line NMOS," IEEE J. Solid-State Circuits, vol. SC-22, pp. 512-521, Apr. 1987.
28. G. M. Yin, "A high speed CMOS comparator with 8-b resolution," IEEE J. Solid-State Circuits, vol. 27, pp. 208-211, Feb. 1992
29. T. Baba, Y. Yogo, K. Suzuki, F. Koyama, and K. Iga, "First room temperature CW operation of GalnAsP/InP surface emitting laser," IEICE Trans. Electron., vol. 76-C, no. 9, pp. 1423-1424, 1993.
30. A. Suzuki, T. Uji, Y. Inomoto, J. Hayashi, Y. Isoda, and H. Nomura, "InGaAsP/InP 1.3 μm wavelenght surface-emitting LED's for high-speed short-haul optical communication systems," J. Lightwave Technol., vol. LT-3, p. 1217-1222, June 1985.
31. Y. Kashima, A. Matoba, and H. Takano, "Performance and reliability of InGaAsP superluminescent diode," J. Lightwave Technol., vol. 10, pp. 1644-1649, Nov. 1992.
32. S. Machida, H. Nagai, and T. Kimura, "Modulation characteristics of InGaAsP/InP LED's at 1.5-μm wavelength," Electron. Lett., vol. 15, no. 6, pp. 175-177, 1979.
33. R. Saul, "Recent advances in the performance and reliability of InGaAsP LED's for lightwave communication systems," IEEE Trans. Electron Devices, vol. 30, pp. 285-295, 1983.
34. F. Hieronymi, E. H. Bottcher, E. Droge, D. Kuhl, and D. Bimberg "High performance large area InGaAs metal-semiconductor-metal photodetectors," IEEE Photon. Technol. Lett., vol. 5, pp. 910-913, Aug. 1993.
35. O. Vendier, N. M. Jokerst, and R. P. Leavitt, "Thin film inverted MSM photodetectors," IEEE Photon. Technol. Lett., vol. 8, pp. 266-268, Feb. 1996.
36. J. B. D. Soole, H. Schumacher, R. Bhat, and M. Koza, "High-speed performance of OMCVD grown InAlAs/InGaAs MSM photodetectors at 1.5 μm and 1.3 μm wavelengths,μ IEEE Photon. Technol. Lett., vol. 1, pp. 250-252, Aug. 1989.
37. M. Klingenstein, J. Kuhl, J. Rosenzweig, C. Moglestue, A. Hulsman, J. Schneider, and K. Kohler, μPhotocurrent gain mechanisms in metal-semiconductor-metal photodetectors,μ Solid State Elect., vol. 37, no. 2, pp. 333-340, 1994.
38. C. Camperi-Ginestet, M. Hargis, N. Jokerst, and M. Allen, μAlignable epitaxial liftoff of GaAs material with selective deposition using polyimide,μ IEEE Photon. Technol. Lett., vol. 2, pp. 1123-1126, 1991.