Copper interconnection technology for silicon large scale integrated circuits

NTT R and D

Volumn 45, Issue 4, 1996, Pages 373-378

  Awaya, Nobuyoshi ^a   Arita, Yoshinobu ^a   Inokawa, Hiroshi ^a   Kobayashi, Toshio ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BOROPHOSPHOSILICATE GLASS; CHEMICAL MECHANICAL POLISHING; INTERCONNECTS;

CHEMICAL POLISHING; CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; COPPER; ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; ELECTROMIGRATION; GLASS; MOSFET DEVICES; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; TITANIUM NITRIDE;

ULSI CIRCUITS;

EID: 0029710576     PISSN: 09152326     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (21)

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