Thin-film inverted MSM photodetectors

IEEE Photonics Technology Letters

Volumn 8, Issue 2, 1996, Pages 266-268

  Vendier, Olivier ^a,c   Jokerst, Nan Marie ^a,c   Leavitt, Richard P ^b,c  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

^c IEEE

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; CRYSTAL LATTICES; ELECTRON DEVICE MANUFACTURE; ETCHING; FREQUENCY RESPONSE; HETEROJUNCTIONS; OPTICAL PROPERTIES; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; THIN FILMS;

FULL WAVE HALF MINIMUM; METAL SEMICONDUCTOR METAL PHOTODETECTORS; RESPONSIVITY; TIME DOMAIN RESPONSE;

PHOTODETECTORS;

EID: 0030085591     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.484262     Document Type: Article

References (17)

1. I. S. Ashour, H. E. Kadir, K. Sherif, J. Pierre Vilcot, and D. Decoster, "Cutoff frequency and responsivity limitation of AlInAs/GaInAs MSM PD using a two dimension bipolar physical model," IEEE Trans. Electron Devices, vol. 42, no. 2, pp. 231-237, 1995.
2. J. Burm, K. I. Litvin, W. J. Schaff, and L. F. Eastman, "Optimization of high-speed metal-semiconductor-metal photodetectors" IEEE Photon. Technol. Lett., vol. 6, no. 6, pp. 722-724, 1994.
3. M. Sickmoller, P. Urbach, and W. Kowalsky, "Characterization of dynamic behavior of metal-semiconductor-metal photodetectors by correlation technique," Jpn. J. Appl. Phys., vol. 33, pp. 844-847, Part 1, no. 1B, 1994.
4. E. John and M. B. Das, "Design and performance analysis of InP-based high speed and high sensitivity optoelectronic integrated receivers," IEEE Trans. Electron Devices, vol. 41, no. 2, pp. 162-171, 1994.
5. Dennis L. Rogers, "Integrated optical receivers using MSM detectors," J. Lightwave Technol., vol. 9, pp. 1635-1638, Dec. 1991.
6. J. H. Kim., H. T. Griem, R. A. Friedman, E. Y. Chan, and S. Ray, "High performance back illuminated InGaAs/InAlAs MSM Photodetector with a record resposivity of 0.96 A/W," IEEE Photon Technol. Lett., vol. 4, pp. 1241-1244, 1992.
7. J.-W. Seo, C. Caneau, R. Bhat, and I. Adesida, "Application of indiumtin-oxide with improved transmittance at 1.3 μm for MSM photodetectors" IEEE Photon. Technol. Lett., vol. 5, no. 11, pp. 1313-1315, 1993.
8. F. Hieronymi, E. H. Bottcher, E. Droge, D. Kuhl, and D. Bimberg, "Large-area low capacitance InP/InGaAs MSM photodetectors for high speed operation under front and rear illumination," Electron. Lett., vol. 30, no. 15, pp. 1247-1248, 1994.
9. R. P. Leavitt and J. L. Bradshaw, "Molecular-Beam-Epitaxial growth and characterization of high quality alloys and multiple quantum wells on InP using a post-evaporation-heated arsenic source," J. Appl. Phys, vol. 76, pp. 3429-3442, 1994.
10. M. Klingenstein, J. Kuhl, J. Rosenzweig, C. Moglestue, A. Hulsman, Jo. Schneider, and K. Kohler, "Photocurrent gain mechanisms in metal-semiconductor-metal photodetectors," Solid State Elect, vol. 37, no. 2, pp. 333-340, 1994.
11. M. Tong, K. Nummila, Andrew Ketterson, Ilesanmi Adesida, C Caneau, and Rajaram Bhat, "InAlAs/InGaAs/InP MODFET's with uniform threshold voltage obtained by selective wet gate recess," IEEE Electron Dev. Lett., vol. 13, no. 10, pp. 525-527, 1992.
12. C. Camperi-Ginestet, M. Hargis, N. Jokerst, and M. Allen, "Alignable epitaxial lift-off of GaAs materials with selective deposition using polyimide diaphragms," IEEE Photon. Technol. Lett., vol 2, no. 12, pp. 1123-1125, 1991.
13. Chin C. Lee, Chen Y. Wang, and G. Matijasevic "Au-In bonding below the eutectic temperature" IEEE Trans. Comp. Hybr. and Manuf. Tech., vol 16, no. 3, 1993.
14. O. Vendier, N. M. Jokerst, and R. P. Leavitt, "High efficiency inverted MSM photodetector," Tech. Dig. CLEO 95, vol. 15, pp. 177-178, May 1995.
15. D. Kuhl, F. Hieronymi, E. H. Bottcher, T, Wolf, D. Dimberg, J. Kuhl, and M Klingenstein, "Influence of space charges on the impulse response of InGaAs metal-semiconductor-metal photodetectors," J. Lightwave Technol., vol 10, no. 6, pp. 753-759, 1992.
16. Nacer Debbar, Alok Rudra, Jean-Francois Carlin, and Marc Legems, "High speed InP/GaInAs metal semiconductor metal photodetectors grown by chemical beam epitaxy," Appl. Phys. Lett., vol. 65, no. 2, pp 228-230, 11 July 1994.
17. J. B. D. Soole, H. Shumacher, H. P. Leblanc, R. Bhat, and M. A. Koza, "High speed performance of OMCVD grown InAlAs/InGaAs MSM photodetectors at 1.5 μm and 1.3 μm wavelengths," IEEE Photon. Technol. Lett., vol. 1, no. 8, pp. 250-252, 1989.