Flip-chip bonded 0.85-μm bottom-emitting vertical-cavity laser array on an AlGaAs substrate

IEEE Photonics Technology Letters

Volumn 8, Issue 9, 1996, Pages 1115-1117

  Ohiso, Yoshitaka ^a   Tateno, Kouta ^a   Kohama, Yoshitaka ^a,b   Wakatsuki, Atushi ^a   Tsunetsugu, Hideki ^a   Kurokawa, Takashi ^a,b  

^a NTT CORPORATION   (Japan)

^b IEEE

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; CURRENT DENSITY; FABRICATION; FLIP CHIP DEVICES; LIGHT REFLECTION; MIRRORS; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

DISTRIBUTED BRAGG REFLECTOR; OPTICAL BOTTOM REFLECTIVITY; OUTPUT POWER CURRENT CHARACTERISTICS; POWER CONVERSION EFFICIENCY; SEMICONDUCTING ALUMINUM GALLIUM ARSENIDE; VERTICAL CAVITY SURFACE EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 0030243266     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.531807     Document Type: Article

References (7)

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