Negative Differential Resistance of AlGaAs/GaAs Heterojunction Bipolar Transistors: Influence of Emitter Edge Current

IEEE Electron Device Letters

Volumn 16, Issue 1, 1995, Pages 8-10

  Waldrop, J R ^a   Chang, M F ^a  

^a ROCKWELL SCIENCE CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRIC VARIABLES MEASUREMENT; GATES (TRANSISTOR); MOLECULAR BEAM EPITAXY; NEGATIVE RESISTANCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; THERMAL EFFECTS;

COMMON EMITTER CHARACTERISTICS; EMITTER EDGE CURRENT; NEGATIVE DIFFERENTIAL RESISTANCE EFFECT; QUANTITATIVE ANALYSIS; QUASI PLANAR PROCESS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0029219113     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.363216     Document Type: Article

References (9)

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