Room temperature photoreflectance of MOCVD-grown InAs/GaAs quantum dots

Solid State Communications

Volumn 110, Issue 12, 1999, Pages 657-660

  Sek, G ^a   Misiewicz, J ^a   Ryczko, K ^a   Kubisa, M ^a   Heinrichsdorff, F ^b   Stier, O ^b   Bimberg, D ^b  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC DENSITY OF STATES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOSTRUCTURED MATERIALS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

PHOTOREFLECTANCE SPECTROSCOPY; QUANTUM DOT OPTICAL TRANSITION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032651939     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(99)00144-1     Document Type: Article

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