Modeling of transconductance degradation and extraction of threshold voltage in thin oxide MOSFET's

Solid State Electronics

Volumn 30, Issue 9, 1987, Pages 953-968

  Wong, Hon Sum ^a   White, Marvin H ^a   Krutsick, Thomas J ^a   Booth, Richard V ^a  

^a LEHIGH UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES - MODELING;

THIN OXIDE MOSFET'S;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0023422261     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(87)90132-8     Document Type: Article

References (51)

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4. An accurate large-signal MOS transistor model for use in computer-aided design
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10. A new approach to the theory and modeling of insulated-gate field-effect transistors
11. A charge-sheet analysis of short-channel enhancement-mode MOSFETs
12. A comparison of MOS inversion layer charge and capacitance formulas
13. An improved method of MOSFET modeling and parameter extraction
14. Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces
15. Transconductance degradation in thin-Oxide MOSFET's
16. Electron mobility in short-channel MOSFET's with series resistances
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18. Techniques for determining threshold
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22. Generalized scaling theory and its application to a ¼ micrometer MOSFET design
23. Drain-voltage effects on the threshold voltage of a small-geometry MOSFET
24. Calculation of the Space Charge, Electric Field, and Free Carrier Concentration at the Surface of a Semiconductor
25. Quantum mechanical calculation of the carrier distribution and the thickness of the inversion layer of a MOS field-effect transistor