Physically-based method for measuring the threshold voltage of MOSFETs

IEE Proceedings, Part G: Circuits, Devices and Systems

Volumn 138, Issue 3, 1991, Pages 351-357

  Yan, Z X ^a   Deen, M J ^a  

^a SIMON FRASER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC MEASUREMENTS--VOLTAGE; SEMICONDUCTOR DEVICES, MOS;

QUASI-CONSTANT CURRENT METHOD; SMALL-GEOMETRY DEVICES; THRESHOLD VOLTAGE;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0026172789     PISSN: 09563768     EISSN: None     Source Type: None    
DOI: 10.1049/ip-g-2.1991.0060     Document Type: Article

References (14)