Modeling of arsenic activation in HgCdTe

Journal of Electronic Materials

Volumn 27, Issue 6, 1998, Pages 605-609

  Berding, M A ^a   Sher, A ^a   Van Schilfgaarde, M ^a   Chen, A C ^b   Arias, J ^b  

^a SRI INTERNATIONAL   (United States)

^b Rockwell International   (United States)

Author keywords

Arsenic; Defects; Doping; HgCdTe

Indexed keywords

EID: 0001740505     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0023-5     Document Type: Article

References (23)

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11. The tellurium vacancy, tellurium interstitial, and the mercury antisite have been previously identified as minority defects for the purpose of establishment of the majority defect equilibrium and have not been included in the present analysis.
12. O.K. Andersen, O. Jepsen and D. Glotzel, Highlights of Condensed Matter Theory, ed. F. Bassani et al. (Amsterdam, The Netherlands: North Holland, 1985), p. 59.
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14. Mark van Schilfgaarde, unpublished.
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16. M.A. Berding (unpublished).
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18. We have used a one-electron picture of the ionization states, although the formalism is capable of dealing with negative-U centers.
19. G.L. Hansen, J.L. Schmit and T.N. Casselman, J. Appl. Phys. 53, 7099 (1982).
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21. The conduction band was fit to a linear dispersion to give agreement with experimental intrinsic carrier concentrations. The conduction bands have a more nearly hyperbolic dispersion near the band edge, but we found that for the purpose of fitting the the carrier concentrations, the linear dispersion assumption was adequate.
22. xTe were taken from J.C. Brice, Prog. Cryst. Growth Charact. 13, 39 (1986).
23. M.A. Berding, A. Sher and M. van Schilfgaarde, J. Electron. Mater. 24, 1127 (1995).