Bandgap-engineering of HgCdTe for two-color IR detector arrays by MOVPE

Materials Research Society Symposium - Proceedings

Volumn 484, Issue , 1997, Pages 233-240

  Mitra, P ^a   Case, F C ^a   Barnes, S L ^a   Reine, M B ^a   O'Dette, P ^a   Tobin, S P ^a  

^a LOCKHEED MARTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; DOPING (ADDITIVES); ENERGY GAP; HETEROJUNCTIONS; MERCURY COMPOUNDS; METALLORGANIC VAPOR PHASE EPITAXY; MULTILAYERS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR MATERIALS;

LONG WAVELENGTH BAND; MEDIUM WAVELENGTH BAND; PHOTOCARRIER; SPECTRAL CROSSTALK;

INFRARED DETECTORS;

EID: 0031344541     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-484-233     Document Type: Conference Paper

References (12)