RHEED studies of the GaN surface during growth by molecular beam epitaxy

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 388-391

  Hughes, O H ^a   Cheng, T S ^a   Novikov, S V ^a   Foxon, C T ^a   Korakakis, D ^a   Jeffs, N J ^a  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CONTAMINATION; COOLING; MOLECULAR BEAM EPITAXY; ORDER DISORDER TRANSITIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR GROWTH; STOICHIOMETRY; SUBSTRATES;

GALLIUM NITRIDE; SURFACE RECONSTRUCTION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032650542     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01354-2     Document Type: Article

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