Mesoscopic transport phenomena in ultrashort channel MOSFETs

Solid-State Electronics

Volumn 43, Issue 7, 1999, Pages 1245-1250

  Wirth, G ^a   Hilleringmann, U ^a   Horstmann, J T ^a   Goser, K ^a  

^a TU DORTMUND UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTROMAGNETIC WAVE INTERFERENCE; GATES (TRANSISTOR); LEAKAGE CURRENTS; SEMICONDUCTOR JUNCTIONS; TRANSCONDUCTANCE; TRANSPORT PROPERTIES;

CHANNEL LENGTHS; COULOMB BLOCKADE; GATE OXIDES; HOPPING CONDUCTION; LIGHTLY DOPED DRAIN; MESOSCOPIC TRANSPORT PHENOMENA; PERIODIC TRANSCONDUCTANCE OSCILLATION; SOURCE DRAIN JUNCTIONS;

MOSFET DEVICES;

EID: 0032650214     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00060-X     Document Type: Article

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