Arsenic vapor pressure dependence of surface morphology and silicon doping in molecular beam epitaxial grown GaAs (n11)A (n = 1-4) substrates

Microelectronics Journal

Volumn 30, Issue 4, 1999, Pages 471-476

  Ohachi, T ^a   Feng, J M ^a   Asai, K ^a   Uwani, M ^a   Tateuchi, M ^a   Vaccaro, P O ^b   Fujita, K ^b,c  

^a DOSHISHA UNIVERSITY   (Japan)

^b ADVANCED TELECOMMUNICATIONS RESEARCH INSTITUTE INTERNATIONAL   (Japan)

^c Sumitomo Metal Industries Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; HALL EFFECT; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SUBSTRATES; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY;

ASYMMETRIC DOUBLE QUANTUM WELLS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032649088     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(98)00155-4     Document Type: Article

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