Photoluminescence investigation of Si-doped GaAs grown by molecular beam epitaxy on non-(100) oriented surfaces

Microelectronics Journal

Volumn 28, Issue 8-10, 1997, Pages 717-726

  Pavesi, L ^a   Henini, M ^b  

^a UNIVERSITY OF TRENTO   (Italy)

^b UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0345532711     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2692(96)00109-7     Document Type: Article

References (18)

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