Lateral tunneling transistors fabricated by plane-dependent sidoping in non-planar epitaxy on GaAs (311)A and (411)A substrates

Microelectronics Journal

Volumn 28, Issue 8-10, 1997, Pages 1025-1029

  Ohnishi, Hajime ^a   Fujita, Kazuhisa ^a   Watanabe, Toshihide ^a,b  

^a ADVANCED TELECOMMUNICATIONS RESEARCH INSTITUTE INTERNATIONAL   (Japan)

^b NHK SCIENCE AND TECHNICAL RESEARCH LABORATORIES   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0042670385     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2692(96)00144-9     Document Type: Article

References (9)

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