Theoretical investigation of the adsorption behavior of Si adatoms on GaAs(001)-(2 × 4) surfaces

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 10 SUPPL. B, 1998, Pages

  Shiraishi, Kenji ^a   Ito, Tomonori ^b  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b NTT CORPORATION   (Japan)

Author keywords

Ab initio calculations; Adsorption behavior; Band structures; Coverage dependence; Electron counting model; GaAs surfaces; Si adatoms; Surface reconstructions

Indexed keywords

ADSORPTION; BAND STRUCTURE; COMPUTATIONAL METHODS; CRYSTAL ATOMIC STRUCTURE; CRYSTAL ORIENTATION; DIMERS; MATHEMATICAL MODELS; SEMICONDUCTING SILICON; SURFACE STRUCTURE;

ADATOMS; ELECTRON COUNTING MODEL; SURFACE RECONSTRUCTION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032179364     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l1211     Document Type: Article

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