EFFECTIVE MOBILITY IN HEAVILY DOPED N-MOSFET’S: MEASUREMENTS AND MODELS

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 395-398

  Villa, S ^a   Lacaita, A L ^a   Perron, L ^a   Bez, R ^b  

^a CNR   (Italy)

^b STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING; ELECTRON GAS; COMPUTER SIMULATION; ELECTRIC FIELDS; ELECTRON SCATTERING; PHONONS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; ULSI CIRCUITS;

ANALYTICAL MOBILITY MODEL; CHARGE-TRAPPING; DEVICE SIMULATIONS; EFFECTIVE MOBILITIES; HEAVILY DOPED; MEASUREMENTS AND MODELING; MOSFETS; NMOSFET; NMOSFETS; TWO DIMENSIONALITY;

MOSFET DEVICES;

CHARGE TRAPPING; ELECTRON GAS; ELECTRON MOBILITY; MATHIESEN RULE SUM METHOD;

EID: 0030410570     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.553611     Document Type: Conference Paper

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