MOSFET simulation with quantum effects and nonlocal mobility model

IEEE Electron Device Letters

Volumn 20, Issue 6, 1999, Pages 298-300

  Spinelli, Alessandro S ^a   Benvenuti, Augusto ^b   Villa, Stefano ^c   Lacaita, Andrea L ^c  

^a UNIVERSITY OF INSUBRIA   (Italy)

^b STMICROELECTRONICS   (Italy)

^c POLITECNICO DI MILANO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; COMPUTER SIMULATION; MATHEMATICAL MODELS; QUANTUM ELECTRONICS; SEMICONDUCTOR DOPING;

POISSONS EQUATIONS; SCHRODINGER EQUATIONS;

MOSFET DEVICES;

EID: 0032648591     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.767104     Document Type: Article

References (12)

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