Photoconductance measurement on TlInGaP grown by gas source MBE

Journal of Crystal Growth

Volumn 188, Issue 1-4, 1998, Pages 107-112

  Koh, H ^a   Asahi, H ^a   Fushida, M ^a   Yamamoto, K ^a   Takenaka, K ^a   Asami, K ^a   Gonda, S ^a   Oe, K ^b  

^a OSAKA UNIVERSITY   (Japan)

^b NTT CORPORATION   (Japan)

Author keywords

Gas source MBE; Photoconductance; Temperature insensitive; TlInGaP

Indexed keywords

ENERGY GAP; MOLECULAR BEAM EPITAXY; PHOTOCONDUCTIVITY; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; THERMAL EFFECTS;

GAS SOURCE MOLECULAR BEAM EPITAXY; TEMPERATURE INSENSITIVE WAVELENGTH LASER DIODES; THALLIUM INDIUM GALLIUM PHOSPHIDE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0032096673     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00047-5     Document Type: Article

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