4H-SiC power devices: Comparative overview of UMOS, DMOS, and GTO device structures

Materials Research Society Symposium - Proceedings

Volumn 483, Issue , 1997, Pages 27-38

  Casady, J B ^a   Agarwal, A K ^a   Rowland, L B ^a   Seshadri, S ^a   Siergiej, R R ^a   Mani, S S ^a   Sheridan, D C ^a   Sanger, P A ^a   Brandt, C D ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONICS PACKAGING; MOS DEVICES; POWER ELECTRONICS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR SWITCHES; SILICON CARBIDE; THYRISTORS;

POWER ELECTRONIC SWITCHES;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0031363762     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-483-27     Document Type: Conference Paper

References (11)