Ion-induced electron emission as a means of studying energy- and angle-dependent compositional changes of solids bombarded with reactive ions. II. Nitrogen bombardment of silicon

Surface Science

Volumn 424, Issue 2, 1999, Pages 299-310

  Kataoka, Y ^a   Wittmaack, K ^a  

^a INSTITUTE OF EPIDEMIOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRON BEAMS; ELECTRON EMISSION; ION BOMBARDMENT; ION IMPLANTATION; NITROGEN; SILICON NITRIDE; SPUTTERING; SUPERSATURATION; SURFACE ROUGHNESS;

ION-SOLID INTERACTIONS;

SILICON;

EID: 0032633837     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(99)00100-4     Document Type: Article

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