SIMS depth profiling of delta-doped layers in silicon

Surface and Interface Analysis

Volumn 24, Issue 7, 1996, Pages 469-475

  Smirnov, V K ^a   Simakin, S G ^a   Potapov, E V ^a   Makarov, V V ^b  

^a RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

^b Centre for Analysis of Substances   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ION BOMBARDMENT; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING BORON; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DOPING; SURFACE ROUGHNESS;

DELTA DOPED LAYERS; DEPTH PROFILING; PRIMARY BEAMS;

SEMICONDUCTING SILICON;

EID: 0030192365     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1096-9918(199607)24:7<469::AID-SIA140>3.0.CO;2-U     Document Type: Article

References (17)

1. S. B. Patel and J. A. Kilner, Proc. 8th Conf. On Secondary Ion Mass Spectrometry (SIMS VIII), ed. by A. Benninghoven, K. T. F. Janssen, J. Tumpner and H. W. Werner, pp. 107-110. Wiley, Chichester (1992); V. K. Smirnov and S. G. Simakin, Proc. 8th Int. Conference On Secondary Ion Mass Spectrometry (SIMS VIII), ed. by A. Benninghoven, K. T. F. Janssen, J. Tumpner and H. W. Werner, pp. 491-494. Wiley, Chichester (1992).
2. S. B. Patel and J. A. Kilner, Proc. 8th Conf. On Secondary Ion Mass Spectrometry (SIMS VIII), ed. by A. Benninghoven, K. T. F. Janssen, J. Tumpner and H. W. Werner, pp. 107-110. Wiley, Chichester (1992); V. K. Smirnov and S. G. Simakin, Proc. 8th Int. Conference On Secondary Ion Mass Spectrometry (SIMS VIII), ed. by A. Benninghoven, K. T. F. Janssen, J. Tumpner and H. W. Werner, pp. 491-494. Wiley, Chichester (1992).
3. M. Meuris, P. de Bisschop, J. F. Leclair and W. Vandervorst, Surf. Interface Anal. 14, 739 (1989)
4. S. G. Simakin, V. K. Smirnov and A. V. Gokhov, Poverkhn. (Rus.) 3, 58 (1994).
5. K. Wittmaack, J. Appl. Phys. 53, 4817 (1982).
6. K. Wittmaack and D. B. Poker, Nucl. Instrum. Methods B47, 224 (1990).
7. W. Vandervorst and F. R. Shepherd, J. Vac. Sci. Technol. A 5(3), 313 (1987).
8. J. P. Biersack, Nucl. Instrum. Methods B27, 21 (1987).
9. M. Meuris, W. Vandervorst and J. Jackman, J. Vac. Sci. Technol. A 9(3), 1482 (1991).
10. M. Petravic, R. G. Elliman and J. S. Williams, Proc. 8th Int. Conf. on Secondary Ion Mass Spectrometry (SIMS VIII), ed. by A. Benninghoven, K. T. F. Janssen, J. Tumpner and H. W. Werner, pp. 367-370, Wiley, Chichester (1992).
11. Y. Homma and K. Wittmaack, Appl. Phys. A 50, 417 (1990).
12. C. J. Vriezema, K. T. F. Janssen, G. M. Fontijn and P. C. Zalm, Proc. 7th Int. Conf. on Secondary Ion Mass Spectrometry (SIMS VII). ed. by A. Benninghoven, C. A. Evans, H. A. Storms and H. W. Werner, pp. 619-622. Wiley, Chichester (1990).
13. M. Meuris, P. de Bisschop, W. Vandervorst, J. A. Jackman and T. E. Jackman, Proc. 7th Int. Conf. on Secondary Ion Mass Spectrometry (SIMS VII), ed. by A. Benninghoven, C. A. Evans, H. A. Storms and H. W. Werner, pp. 623-626. Wiley, Chichester (1990).
14. V. K. Smirnov, E. V. Potapov, D. A. Kurbatov and A. V. Gokhov, Poverkhn. (Rus.) 10, 65 (1993).
15. K. Elst and W. Vandervorst, J. Vac. Sci. Technol. A 12(6), 3205 (1994).
16. K. Wittmaack, J. Vac. Sci. Technol. A 8(3), 2246 (1990).
17. H. S. Fox, M. G. Dowsett, R. D. Barlow, D. E. Sykes, A. Chew, J. A. Kilner, M. K. Bhan and C. Hill, Proc. 8th Int. Conf. on Secondary Ion Mass Spectrometry (SIMS VIII), ed. by A. Benninghoven, K. T. F. Janssen, J. Tumpner and H. W. Werner, pp. 131-134. Wiley, Chichester (1992).