Atomic layer epitaxy processes of ZnSe on GaAs(0 0 1) as observed by beam-rocking reflection high-energy electron diffraction (RHEED) and total-reflection-angle X-ray spectroscopy (TRAXS)

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 490-493

  Ohtake, Akihiro ^a,b   Hanada, Takashi ^a,c,d   Arai, Kenta ^a,c,d   Komura, Takuji ^a,c,d   Miwa, Shiro ^a,b   Kimura, Kozo ^a,b   Yasuda, Tetsuji ^a,c   Jin, Chengguo ^a,c   Yao, Takafumi ^a,c,d  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

^b JRCAT Angstrom Technology Partnership (ATP)   (Japan)

^c NATL INST FOR ADV INTERDISC RES   (Japan)

^d TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; FILM GROWTH; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; X RAY CRYSTALLOGRAPHY; X RAY SPECTROSCOPY;

ATOMIC LAYER EPITAXY (ALE) PROCESSES; TOTAL-REFLECTION-ANGLE X RAY SPECTROSCOPY (TRAXS);

MOLECULAR BEAM EPITAXY;

EID: 0032633341     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01383-9     Document Type: Article

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