Lumped DC-50GHz amplifier using InP/InGaAs HBTs

Electronics Letters

Volumn 35, Issue 1, 1999, Pages 53-55

  Huber, A ^a   Huber, D ^a   Bergamaschi, C ^b   Morf, T ^a   Jackel H ^a  

^a ETH ZURICH   (Switzerland)

^b UNIVERSITY OF APPLIED SCIENCES AND ARTS NORTHWESTERN SWITZERLAND   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; HETEROJUNCTION BIPOLAR TRANSISTORS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

LUMPED BROADBAND AMPLIFIERS;

BROADBAND AMPLIFIERS;

EID: 0033531002     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19990003     Document Type: Article

References (5)

1. KOBAYASHI, K.W., COWLES, J., TRAN, L.T., GUTIERREZ-AITKEN, A., BLOCK, T.R., OKI, K., and STREIT, D.C.: 'A 50MHz-55GHz multidecade InP-based HBT distributed amplifier', IEEE Microw. Guid. Wave Lett., 1997, 7, pp. 353-355
2. HUBER, D., BITTER, M., ROMIER, S., SCHNYDER, I., BAUKNECHT, R., MORF, T., BERGAMASCHI, C., and JACKEL, H.: '23GHz monolithically integrated InP/InGaAs PIN/HBT-receiver with 12THzΩ gain-bandwidth product'. Proc. 10th Int. Conf. Indium Phosphide and Related Materials, 1998, pp. 447-450
3. KIPNIS, I., KUKIELKA, J.F., WHOLEY, J., and SNAPP, C.P.: 'Silicon bipolar fixed and variable gain amplifier MMICs for microwave and lightwave applications up to 6GHz'. IEEE Microwave and Millimeter-Wave Monolithic Circuits Symp. Dig., 1989, pp. 101-104
4. AGARWAL, B., LEE, Q., MENSA, D., PULLELA, R., GUTHRIE, J., and RODWELL, M.J.W.: 'Broadband feedback amplifier with AlInAs/ GaInAs transferred-substrate HBT', Electron. Lett., 1998, 34, pp. 1357-1358
5. SUZUKI, Y., SHIMAWAKI, H., AMAMIYA, Y., NAGANO, N., NIWA, T., YANO, H., and HONJO, K.: '50GHz bandwidth baseband amplifiers using GaAs-based HBTs'. IEEE GaAs IC-Symp. Dig., 1997