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Volumn 68, Issue 6, 1999, Pages 627-629

Surface preparation effect of GaAs(110) substrates on the ZnSe epitaxial layer grown by molecular beam epitaxy

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; MORPHOLOGY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; STOICHIOMETRY; SURFACES;

ETCH PIT DENSITY; SURFACE PREPARATION; THERMAL EVAPORATION;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0032625256 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s003390050951 Document Type: Article

Times cited : (2)

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