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Volumn 178, Issue 3, 1997, Pages 246-251

Optimization of ZnSe growth on the cleavage-induced GaAs (1 1 0) surface by molecular-beam epitaxy

Author keywords

GaAs (1 1 0); MBE; ZnSe

Indexed keywords

EMISSION SPECTROSCOPY; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PHOTOLUMINESCENCE; PRESSURE EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUBSTRATES; SURFACE STRUCTURE; X RAY CRYSTALLOGRAPHY;

EID: 0031185864     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)01126-8     Document Type: Article
Times cited : (12)

References (19)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.