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Volumn 178, Issue 3, 1997, Pages 246-251
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Optimization of ZnSe growth on the cleavage-induced GaAs (1 1 0) surface by molecular-beam epitaxy
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Author keywords
GaAs (1 1 0); MBE; ZnSe
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Indexed keywords
EMISSION SPECTROSCOPY;
MOLECULAR BEAM EPITAXY;
MORPHOLOGY;
PHOTOLUMINESCENCE;
PRESSURE EFFECTS;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTOR GROWTH;
SUBSTRATES;
SURFACE STRUCTURE;
X RAY CRYSTALLOGRAPHY;
CLEAVAGE INDUCED SURFACE;
ZINC SELENIDE;
SEMICONDUCTING ZINC COMPOUNDS;
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EID: 0031185864
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(96)01126-8 Document Type: Article |
Times cited : (12)
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References (19)
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