ZnSe heteroepitaxy on GaAs (110) substrate

Journal of Electronic Materials

Volumn 27, Issue 2, 1998, Pages 85-88

  Cho, M W ^a   Koh, K W ^a   Bagnall, D M ^a   Zhu, Z ^a   Yao, T ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Etch pit density (EPD); GaAs (110); Molecular beam epitaxy (MBE); ZnSe

Indexed keywords

CRYSTALLINE MATERIALS; DISLOCATIONS (CRYSTALS); ETCHING; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES;

ETCH PIT DENSITY (EPD); RUTHERFORD BACKSCATTERING CHANNELING MEASUREMENTS;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0031996833     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0194-0     Document Type: Article

References (12)

1. A. Ishibashi, International Symposium on Blue Laser and Light Emitting Diode, Chiba, Japan, eds. A. Yoshikawa, K. Kishino, M. Kobayashi and T. Yasuda (Ohmsha, Tokyo, 1996).
2. A. Ishibashi, J. Cryst. Growth 159, 555 (1996).
3. J. Petruzzello, K.W. Haberern, S.P. Herko, T. Marshall, J.M. Gaines, S. Guha, G.D. U'Ren and G.M. Haugen, J. Cryst. Growth 159, 573 (1996).
4. Y. Takano, M. Lopez, T. Torihata, T. Ikei, Y. Kanaya, K. Park and H. Yonezu, J. Cryst. Growth 111, 216 (1991).
5. L.T.P. Allen and E.R. Weber, Appl. Phys. Lett. 51 (9), 670 (1987).
6. T. Narusawa, F. Nishiyama, Z. Zhu and T. Yao, Jpn. J. Appl. Phys. 36, L12 (1997).
7. K.W. Koh, M.W. Cho, T. Kanada, K.H. Yoo, Z. Zhu and T. Yao, to appear in J. Cryst. Growth (1997).
8. S.K. Hong, B.J. Kim, M.D. Kim, G.S. Park, J.H. Lee, H.S. Park, S.Y. Yoon, T.I. Kim et al., to appear in J. Cryst. Growth 180 (1997).
9. H. Oczkowski and Z. Poplawski, J. Cryst. Growth 23, 154 (1974).
10. H. Iwanaga and Shibata, J. Cryst. Growth 67, 97 (1984).
11. L.H. Kuo, K. Kimura, S. Muwa, T. Yasuda and T. Yao, Appl. Phys. Lett. 69 (10).
12. S. Miwa, L H. Kuo, K. Kimura, A. Otake, T. Yasuda, C.G. Jin and T. Yao, to appear in J. Cryst. Growth (1998).