Effect of cleaving environment on the growth of ZnSe on the GaAs (1 1 0) surface by molecular beam epitaxy

Journal of Materials Science Letters

Volumn 16, Issue 13, 1997, Pages 1187-1190

  Ko, Hyun Chul ^a   Park, Doo Cheol ^a   Kawakami, Yoichi ^a   Fujita, Shizuo ^a   Fujita, Shigeo ^a   Kim, Chai Ok ^b  

^a KYOTO UNIVERSITY   (Japan)

^b Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; SURFACE STRUCTURE; SURFACE TREATMENT; X RAY CRYSTALLOGRAPHY;

SURFACE CLEAVING;

SEMICONDUCTING FILMS;

EID: 0031187844     PISSN: 02618028     EISSN: None     Source Type: Journal    
DOI: 10.1007/bf02765406     Document Type: Article

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