Heterointerface dipoles: Applications to (a) Si-SiO2, (b) nitrided Si-N-SiO2, and (c) SiC-SiO2 interfaces

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 4, 1998, Pages 2191-2198

  Lucovsky, G ^a   Yang, H ^b   Massoud, H Z ^c  

^a North Carolina State University   (United States)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

^c Duke University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0344670480     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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