Stress relaxation by surface rippling and dislocation generation in mismatched channels of InGaAs/InAlAs/InP high-electron-mobility transistors

Applied Physics Letters

Volumn 74, Issue 25, 1999, Pages 3818-3820

  Peiro F ^a   Cornet, A ^a   Beck, M ^b   Py, M A ^b  

^a UNIVERSITY OF BARCELONA   (Spain)

^b EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); HALL EFFECT; HETEROJUNCTIONS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; STRAIN; STRESS RELAXATION; TRANSMISSION ELECTRON MICROSCOPY;

ANISOTROPIC RIPPLING;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032613531     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124190     Document Type: Article

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