Surface roughness in InGaAs channels of high electron mobility transistors depending on the growth temperature: Strain induced or due to alloy decomposition

Journal of Applied Physics

Volumn 83, Issue 12, 1998, Pages 7537-7541

  Peiro F ^a   Cornet, A ^a   Morante, J R ^a   Beck, M ^b   Py, M A ^b  

^a UNIVERSITY OF BARCELONA   (Spain)

^b EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005226503     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.367517     Document Type: Article

References (8)

1. F. Peiró, A. Cornet, J. R. Morante, and A. Georgakilas, J. Vac. Sci. Technol. B 13, 1006 (1995).
2. M. Beck and M. Ilegems, Proceedings of 8th IPRM Conference, Germany, 1996, p. 97, IEEE Catalog 96 CH 35930.
3. F. Peiró, J. C, Ferrer, A. Cornet, J. R. Morante, M. Beck, and M. A. Py, Inst. Phys. Conf. Ser. 160, 491 (1997).
4. F. Peiró, J. C. Ferrer, A. Cornet, J. R. Morante, M. Beck, and M. A. Py, J. Vac. Sci. Technol. B 15, 1715 (1997).
5. K. C. Hsieh, J. N. Baillargeon, and K. Y. Cheng, Appl. Phys. Lett. 57, 2244 (1990).
6. F. Peiró, A. Cornet, J. R. Morante, and A. Georgakilas, Mater. Res. Soc. Symp. Proc. 417, 265 (1996).
7. F. Glas, J. Appl. Phys. 62, 3201 (1987).
8. A. M. Mintiarov and H. Temkin, Phys. Rev. B 55, 5117 (1997).