Influence of growth conditions on mobility and anisotropy of InyGa1-yAs/In0.52Al0.48As/InP HEMT's with y = 0.53 to 0.80

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1996, Pages 97-100

  Beck, M ^a   Ilegems, M ^a  

^a EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; STRESS RELAXATION;

CHANNEL GROWTH TEMPERATURE; LATTICE MATCHED SYSTEM; MOBILITY REDUCTION; PSEUDOMORPHIC CHANNELS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0029698719     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (18)