Scanning tunneling microscope study of (001)InP surface prepared by gas source molecular beam epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 1267-1272

  Yang, Bing Xiong ^a   Ishikawa, Yasuhiko ^a   Ozeki, Tsuyoshi ^a   Hasegawa, Hideki ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

(2 4); InP; Scanning tunneling microscope; Surface reconstruction

Indexed keywords

ANNEALING; CHARACTERIZATION; MOLECULAR BEAM EPITAXY; MOLECULAR STRUCTURE; PHOSPHORUS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SURFACES; X RAY PHOTOELECTRON SPECTROSCOPY;

GAS SOURCE MOLECULAR BEAM EPITAXY; OXIDE PATCHES; SURFACE RECONSTRUCTION; ULTRAHIGH VACUUM SCANNING TUNNELING MICROSCOPY;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0030080395     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.1267     Document Type: Article

References (24)

1. A. Y. Cho: J. Appl. Phys. 42 (1971) 2074.
2. J. H. Neave and B. A. Joyce: J. Cryst. Growth 44 (1978) 387.
3. D. J. Chadi: J. Vac. Sci. & Technol. A 5 (1987) 834.
4. H. H. Farrell and C. J. Palmstrom: J. Vac. Sci. & Technol. B 8 (1990) 903.
5. M. D. Pashley, K. W. Haberern, W. Friday, J. M. Woodall and P. D. Kirchner: Phys. Rev. Lett. 60 (1988) 2176.
6. D. K. Biegelsen, R. D. Bringans, J. E. Northrup and L. E. Schwartz: Phys. Rev. B 41 (1990) 5701.
7. T. Hashizume, Q. K. Xue, J. Zhou, A. Ichimiya and T. Sakurai: Phys. Rev. Lett. 73 (1994) 2208.
8. Y. Haga, S. Miwa and E. Morita: J. Vac. Sci. & Technol. B 12 (1994) 2107.
9. S. Ohkouchi and N. Ikoma: Jpn. J. Appl. Phys. 33 (1994) 3710.
10. A. R. Avery, D. M. Holmes, J. Sudijono, T. S. Jones and B. A. Joyce: Surf. Sci. 323 (1995) 91.
11. M. C. Gallagher, R. H. Prince and R. F. Willis: Surf. Sci. 275 (1992) 31.
12. M. Wassermeier, V. Bressler-Hill, R. Maboudian, K. Pond, X.-S. Wang and P. M. Petroff: Surf. Sci. 278 (1992) L147.
13. A. R. Avery, D. M. Holmes, T. S. Jones, B. A. Joyce and G. A. D. Briggs: Phys. Rev. B 50 (1994) 8098.
14. G. E. Franklin, D. H. Rich, A. Samsavar, E. S. Hirschorn, F. M. Leibsle, T. Miller and T.-C. Chiang: Phys. Rev. B 41 (1990) 12619.
15. S. Ohkouchi and I. Tanaka: Appl. Phys. Lett. 59 (1991) 1588.
16. M. T. Norris: Appl. Phys. Lett. 36 (1980) 282.
17. H. Asahi, Y. Kawamura, M. Ikeda and H. Okamoto: J. Appl. Phys. 52 (1981) 2852.
18. N. Takeyasu, H. Asahi, S. J. Yu, K. Asami, T. Kaneko and S. Gonda: J. Cryst. Growth 111 (1991) 502.
19. B. X. Yang and H. Hasegawa: Jpn. J. Appl. Phys. 30 (1991) 3782.
20. B. X. Yang and H. Hasegawa: Jpn. J. Appl. Phys. 33 (1994) 742.
21. M. D. Pashley and K. W. Haberern: Phys. Rev. Lett. 67 (1991) 2697.
22. M. D. Pashley, K. W. Haberern, R. M. Feenstra and P. D. Kirchner: Phys. Rev. B 48 (1993) 4612.
23. H. H. Farrell, J. P. Harbison and L. D. Peterson: J. Vac. Sci. & Technol. B 5 (1987) 1482.
24. J. M. Zhou, Q. K. Xue, H. Chaya, T. Hashizume and T. Sakurai: Appl. Phys. Lett. 64 (1994) 583.