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Volumn 83, Issue 1, 1998, Pages 480-485

Reflectance anisotropy spectroscopy study of the surface reconstructions of decapped InP(001)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ANNEALING; LOW ENERGY ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; SPECTROSCOPY; STOICHIOMETRY;

EID: 0031695745     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366718     Document Type: Article
Times cited : (14)

References (32)
  • 10
    • 85034279679 scopus 로고    scopus 로고
    • note
    • Following the notation of MacPherson et al., the 1/2 oder spots are in the [110] direction.
  • 27
    • 85034304289 scopus 로고    scopus 로고
    • note
    • Specifically, for the GaAs(001) surface, the Ga-rich (4×2) reconstruction exhibits a negative anisotropy at 1.7 eV whereas the As-rich (2×4) reconstruction exhibits a positive anisotropy at 2.7 eV.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.