GaN based LED's with different recombination zones

MRS Internet Journal of Nitride Semiconductor Research

Volumn 2, Issue , 1997, Pages

  Schauler, M ^a   Kirchner, C ^a   Mayer, M ^a   Pelzmann, A ^a   Eberhard, F ^a   Kamp, Markus ^a   Unger, P ^a   Ebeling, K J ^a  

^a UNIVERSITY OF ULM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; ION BEAMS; LIGHT EMITTING DIODES; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; SPECTRUM ANALYSIS;

LIGHT SPECTRUM; MATERIAL GROWTH; RECOMBINATION ZONES; SINGLE PEAK EMISSION;

GALLIUM NITRIDE;

EID: 0344115178     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300001708     Document Type: Article

References (5)

1. Shuji Nakamura, Takashi Mukai, Masayuki Senoh, Appl. Phys. Lett. 64, 1687-1689 (1994).
2. P Schlotter, R Schmitt, J Schneider, Appl. Phys. A 64, 417-418 (1997).
3. M. Kamp, M. Mayer, A. Pelzmann, K. J. Ebeling, Mater. Res. Soc. Symp. Proc. 449, 161-172 (1997).
4. GK Reeves, Sol. St Electr. 23, 487-490 (1980).
5. S. Nakamura, T. Mukai, M. Senoh, Jpn. J. Appl. Phys. 30, L1998 (1991).