High-temperature performance of GaAs-based HFET structure Containing LT-AlGaAs and LT-GaAs

IEEE Electron Device Letters

Volumn 19, Issue 7, 1998, Pages 225-227

  Schmid, P ^a   Lipka, K M ^a   Ibbetson, J ^b   Nguyen, N ^b   Mishra, U ^b   Pond, L ^c   Weitzel, C ^c   Kohn, E ^a  

^a UNIVERSITY OF ULM   (Germany)

^b University of California   (United States)

^c MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; HIGH TEMPERATURE EFFECTS; HOT CARRIERS; PERFORMANCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

CUTOFF FREQUENCY;

FIELD EFFECT TRANSISTORS;

EID: 0032122698     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.701424     Document Type: Article

References (9)

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