Deep levels in GaN grown by nitridation of GaAs (110) surface in a electron cyclotron-resonance ammonia plasma

Vacuum

Volumn 55, Issue 2, 1999, Pages 121-126

  Hullavarad, Shiva S ^a   Bhoraskar, S V ^a   Sainkar, S R ^b   Badrinarayanan, S ^b   Mandale, A B ^b   Ganesan, V ^c  

^a UNIVERSITY OF PUNE   (India)

^b NATIONAL CHEMICAL LABORATORY   (India)

^c Inter Univ Consortium for DAE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; CRYSTAL DEFECTS; ELECTRON CYCLOTRON RESONANCE; GRAIN SIZE AND SHAPE; NANOSTRUCTURED MATERIALS; NITRIDES; NITRIDING; PHOTOLUMINESCENCE; PLASMA APPLICATIONS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; STOICHIOMETRY;

GALLIUM NITRIDE; THERMALLY STIMULATED EXOELECTRON EMISSION SPECTROSCOPY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032594975     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(99)00137-2     Document Type: Article

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